GF00000975 with NSN 5962-01-306-5559 by Bae Systems - Request an Instant Quote
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Part Number: GF00000975
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Manufacturer: Bae Systems
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NSN: 5962-01-306-5559 (5962013065559)
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NIIN: 013065559
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Item Name : Microcircuit Memory
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CAGE Code: K0978
Your required NSN Part GF00000975 Under Microcircuit Memory with FSC 5962 Microcircuits Electronic manufactured by Bae Systems having CAGE Code K0978 is now in stock and available for immediate dispatch! The NSN for this particular part is 5962013065559. If you are interested in obtaining the best quote for NSN Part GF00000975, you can easily do so by filling out the form.
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NSN Information for Part Number GF00000975 with NSN 5962-01-306-5559, 5962013065559
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-306-5559 Item Description: Microcircuit Memory | 5962 | 013065559 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Gf00000975 | 5 | 2 | 5 |
Characteristics Data of NSN 5962-01-306-5559, 5962013065559
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ABHP | OVERALL LENGTH1 280 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH4 40 MILLIMETERS MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM SUPPLY |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
| MEMORY | ABMK | OVERALL WIDTH0 320 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT5 59 MILLIMETERS MINIMUM AND 7 87 MILLIMETERS MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
| MEMORY | ABKW | OVERALL HEIGHT0 400 INCHES MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH32 51 MILLIMETERS MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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